Article
Article name Temperature Dependence of the Reflection Spectra of the Plasma Crystal Bi0,6Sb1,4T e3 in the Temperature Range of 78 K – 292 K
Authors Stepanov N.P. Doctor of Physics and Mathematics, np-stepanov@mail.ru
Trubitsina E.N. Master of Physical Education, TrubitsinaEkaterina@gmail.com
Bibliographic description
Section Scientific Research
UDK 537.5+534.143
DOI
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Annotation During the studies of the optical properties of solid solutions of Bi2T e3-Sb2T e3 the changes in the state of the electronic system by varying the temperature and the ratio of components of Bi2T e3 and Sb2T e3 were considered. It was found that when the content of 75 per cent in theSb2T3 solid solution of a convergence of energy of plasma oscillations of free charge carriers and energy inter-band transitions forming the fundamental absorption edge. Reducing the temperature of the crystalBi0,6Sb1,4T e3 from 300 to 78 K, it is possible to observe a smooth shift of the plasma edge to the edge of the fundamental absorption and reflection spectra of the strain caused by amplifying the electron-plasmon interaction.
Key words semiconductors, thermoelectric materials, plasma resonance, the fundamental absorption edge, the reflection range.
Article information
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Full articleTemperature Dependence of the Reflection Spectra of the Plasma Crystal Bi0,6Sb1,4T e3 in the Temperature Range of 78 K – 292 K