| Article |
|---|
| Article name |
Temperature Dependence of the Reflection Spectra of the Plasma Crystal Bi0,6Sb1,4T e3 in the Temperature Range of 78 K – 292 K |
| Authors |
Stepanov N.P. Doctor of Physics and Mathematics, np-stepanov@mail.ruTrubitsina E.N. Master of Physical Education, TrubitsinaEkaterina@gmail.com |
| Bibliographic description |
|
| Section |
Scientific Research |
| UDK |
537.5+534.143 |
| DOI |
|
| Article type |
|
| Annotation |
During the studies of the optical properties of solid solutions of Bi2T e3-Sb2T e3 the
changes in the state of the electronic system by varying the temperature and the ratio of
components of Bi2T e3 and Sb2T e3 were considered. It was found that when the content of
75 per cent in theSb2T3 solid solution of a convergence of energy of plasma oscillations of
free charge carriers and energy inter-band transitions forming the fundamental absorption
edge. Reducing the temperature of the crystalBi0,6Sb1,4T e3 from 300 to 78 K, it is possible
to observe a smooth shift of the plasma edge to the edge of the fundamental absorption and
reflection spectra of the strain caused by amplifying the electron-plasmon interaction.
|
| Key words |
semiconductors, thermoelectric materials, plasma resonance, the fundamental
absorption edge, the reflection range. |
| Article information |
|
| References |
1. Gol’tsman B. M., Kudinov V. A., Smirnov I. A. Poluprovodnikovye termoelektricheksie
materialy na osnorve Bi2T e3. M.: Nauka, 1972. 321 s.
2. Stepanov N. P., Grabov V. M. Opticheskie effekty, obuslovlennye sovpadeniem energii
plazmennykh kolebanii i mezhzonnogo perekhoda v legirovannykh aktseptornoi primes’yu
kristallakh vismuta // Optika i spektroskopiya. 2002. T. 92. №5. s. 794–798.
3. Stepanov N. P. [i dr.]. Anizatropiya plazmenngogo otrazheniya tverdykh rastvorov
(Bi2−xSbx) T e3(0 < x < 1) v diapozone temperatur ot 78 do 293 K // Optika i
spektroskopiya. 2011. T. 111. №6. S. 967–973.
4. Stepanov N. P., Kalashnikov A. A., Ulashkevich Yu. V. Opticheksie funktsii kristallov
tvyordykh rastvorov Bi2T e3 − Sb2T e3 v oblasti vozbuzhdeniya plazmonov mezhzonnykh
perekhodov // Optika i spektroskopiya. metricconverterProductID2010 a. 2010. T. 109. №6.
S. 1138–1143.
5. Austin J. G. Proc. Phys. Soc. 72. 549(1958).
6. Dornhaus R., Nimtz G. The Effect of Single-phonon and plasmon recombination on the
Lifetime in n − Hg1−xCdx Te with magnetically tuned bandgap // Solid - State Electronics.
1978. V. 21. P. 1471–1474.
7. Groth R., Schnabel P., Phys J. Chem. Sol. 25. 1261 (1964).
8. Sehr R., Testardi L. R,. Apll J. Phys. 34. 2754 (1963).
9. Sehr R., Testardi L. R., J.Phys. Chem. Sol.23. 1219(1962).
10. Stordeur M. Investigation of valence band structure of thermoelectric Bi2T e3Sb2T e3
single crystals / M. Stordeur, M. Stolzer, H. Sobotta, V. Riede // Phys. stat. sol. (b) 150.
1988. P. 165–176
11. Stordeur M. Investigation of valence band structure of thermoelectric Bi2T e3Sb2T e3
single crystals / M. Stordeur, M. Stolzer, H. Sobotta, V. Riede // Phys. stat. Sol. (b) 150.
1988. P. 260.
12. Wolff P. A. Plasma-wave instability in narrow-gap semiconductors // Physical review
letters. 1970. V. 24. №6. P. 266–269. |
| Full article | Temperature Dependence of the Reflection Spectra of the Plasma Crystal Bi0,6Sb1,4T e3 in the Temperature Range of 78 K – 292 K |
