| Article |
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| Article name |
Temperature Dependence of the Reflection Spectra of the Plasma Crystal Bi0,6Sb1,4T e3 in the Temperature Range of 78 K – 292 K |
| Authors |
Stepanov N.P.Doctor of Physics and Mathematics np-stepanov@mail.ruTrubitsina E.N.Master of Physical Education TrubitsinaEkaterina@gmail.com |
| Bibliographic description |
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| Section |
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| DOI |
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| UDK |
537.5+534.143 |
| Article type |
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| Annotation |
During the studies of the optical properties of solid solutions of Bi2T e3-Sb2T e3 the
changes in the state of the electronic system by varying the temperature and the ratio of
components of Bi2T e3 and Sb2T e3 were considered. It was found that when the content of
75 per cent in theSb2T3 solid solution of a convergence of energy of plasma oscillations of
free charge carriers and energy inter-band transitions forming the fundamental absorption
edge. Reducing the temperature of the crystalBi0,6Sb1,4T e3 from 300 to 78 K, it is possible
to observe a smooth shift of the plasma edge to the edge of the fundamental absorption and
reflection spectra of the strain caused by amplifying the electron-plasmon interaction.
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| Key words |
semiconductors, thermoelectric materials, plasma resonance, the fundamental
absorption edge, the reflection range. |
| Article information |
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| References |
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| Full article | Temperature Dependence of the Reflection Spectra of the Plasma Crystal Bi0,6Sb1,4T e3 in the Temperature Range of 78 K – 292 K |
