| Article |
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| Article name |
Low Dielectric Constant Materials in Micro- and Nanoelectronics |
| Authors |
Arkhincheev V.Y.Doctor of Physics and Mathematics, Chief researcher of the Department of Physical Problems varkhin@mail.ruBaklanov M.R.Doctor of Chemistry, Chairman of IC Program Reliability baklanov@imec.be |
| Bibliographic description |
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| DOI |
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| UDK |
УДК 621.3.049.77 |
| Article type |
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| Annotation |
The discovery of transistor is one of the most outstanding events in technical revolution
in the 20th century. An integrated circuit (IC, chip, microchip) is a miniaturized electronic
circuit consisting mainly of semiconductor devices, as well as passive components. Integrated
circuits are fabricated on the surface of a semiconductor material and are used in almost all
electronic equipment in use today. Computers, cellular phones, and other digital appliances are
now inextricable parts of the structure of modern societies, made possible by the production
of integrated circuits. Increase of complexity of integrated circuits required introduction of
new materials. These are not only new types of semiconducting materials but also different
types of conductive and isolating materials. Copper recently replaced traditional Al, presently
carbon nanotubes and grapheme are considered as potential candidates. Different types of
dielectric materials are used for the gate application (high-k materials) and for interconnects
in integrated circuits (low-k). This paper givesa short historical overview and more detailed
discussions of properties of low-k materials developed and studied during the last decade.
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| Key words |
microelectronics, interconnect technology, low-k materials, porosity. |
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| Full article | Low Dielectric Constant Materials in Micro- and Nanoelectronics |
